silicon rf power semiconductors rd02mus1b rohs compliance,silicon mosfet po wer transistor 175mhz,520mhz,2w rd02mus1b 17 aug 2010 1/9 electrostatic sensitive device observe handling precautions outline drawing 0.2+/-0.05 0.2+/-0.05 0.9+/-0.1 index mark (gate) 6.0+/-0.15 4.9+/-0.15 terminal no. 1.drain (output) 2.source (gnd) 3.gate (input) note ( ):center value unit:mm 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 1.0+/-0.05 (0.25) 2 3 1 3.5+/-0.05 2.0+/-0.05 (0.25) (0.22) (0.22) description rd02mus1b is a mos fet type transistor specifically designed for vhf/uhf rf power amplifiers applications. rd02mus1b improved a drain surge than rd02mus1 by optimizing mosfet structure. features high power gain: pout>2w, gp>16db @vdd=7.2v,f=175mhz, 520mhz high efficiency: 65%typ. (175mhz) high efficiency: 65%typ. (520mhz) application for output stage of high power amplifiers in vhf/uhf band mobile radio sets. rohs compliant rd02mus1b-101,t112 is a rohs compliant products. rohs compliance is indicating by t he letter ?g? after the lot marking. this product includes the lead in high melting temperature type solders. however, it is applicable to the follo wing exceptions of rohs directions. 1.lead in high melting temperature type solders (i.e.ti n-lead solder alloys containing more than85% lead.)
silicon rf power semiconductors rd02mus1b rohs compliance,silicon mosfet po wer transistor 175mhz,520mhz,2w rd02mus1b 17 aug 2010 2/9 electrostatic sensitive device observe handling precautions absolute maximum ratings (tc=25 c unless otherwise noted) symbol parameter conditions ratings unit vdss drain to source voltage vgs=0v 30 v vgss gate to source voltage vds=0v +/-20 v pch channel dissipation tc=25 c 21.9 w pin input power zg=zl=50 ? 0.1 w id drain current - 1.5 a tch junction temperature - 150 c tstg storage temperature - -40 to +125 c rth j-c thermal resistance junction to case 5.7 c/w note: above parameter s are guaranteed independently. electrical characteristics (tc=25 c , unless otherwise noted) limits unit symbol parameter conditions min typ max. i dss drain cutoff current v ds =17v, v gs =0v - - 100 ua i gss gate cutoff current v gs =10v, v ds =0v - - 1 ua v th gate threshold voltage v ds =12v, i ds =1ma 1 1.8 3 v pout1 output power 2 3 - w d1 drain efficiency v dd =7.2v, pin=50mw, f=175mhz idq=200ma 55 65 - % pout2 output power 2 3 - w d2 drain efficiency v dd =7.2v, pin=50mw, f=520mhz idq=200ma 50 65 - % load vswr tolerance v dd =9.2v,po=2w(pin control) f=175mhz,idq=200ma,zg=50 ? load vswr=20:1(all phase) no destroy - load vswr tolerance v dd =9.2v,po=2w(pin control) f=520mhz,idq=200ma,zg=50 ? load vswr=20:1(all phase) no destroy - note: above parameters, ratings, limit s and conditions are subject to change.
silicon rf power semiconductors rd02mus1b rohs compliance,silicon mosfet po wer transistor 175mhz,520mhz,2w rd02mus1b 17 aug 2010 3/9 electrostatic sensitive device observe handling precautions typical characteristics vds vs. ciss characteristics 0 10 20 30 40 0 5 10 15 20 vds(v) ciss(pf) ta=+25c f=1mhz vds vs. coss characteristics 0 10 20 30 40 0 5 10 15 20 vds(v) coss(pf) ta=+25c f=1mhz vds vs. crss characteristics 0 1 2 3 4 5 6 0 5 10 15 20 vds(v) crss(pf) ta=+25c f=1mhz vgs-ids characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 012345 vgs(v) ids(a),gm(s) ta=+25c vds= 7.2v ids gm vds-ids characteristics 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0246810 vds(v) ids(a) ta=+25c vgs=9v vg s=8v vg s=7v vg s=6v vg s=5v vg s=4v vg s=3v vg s=10v channel dissipation vs. ambient temperature 0 5 10 15 20 25 0 40 80 120 160 200 ambient temperature ta(deg:c.) channel dissipation pch(w ) ... on pcb (*1) with throug h hole and heat-sink on heat- sink *1:the mater ial of the pcb glass epoxy (t=0.8 mm)
silicon rf power semiconductors rd02mus1b rohs compliance,silicon mosfet po wer transistor 175mhz,520mhz,2w rd02mus1b 17 aug 2010 4/9 electrostatic sensitive device observe handling precautions typical characteristics pin-po characteristics @f=175mhz 0 5 10 15 20 25 30 35 40 -10 -5 0 5 10 15 20 pin(dbm) po(dbm) , gp(db) , idd(a) 20 30 40 50 60 70 80 90 100 d(%) ta=+25c f=175mhz vdd=7.2v idq=200ma po 3 gp pin-po characteristics @f=175mhz 0.0 1.0 2.0 3.0 4.0 0 20 40 60 80 100 pin(mw) pout(w) , idd(a) 20 40 60 80 100 d(%) po d idd ta=25c f=175mhz vdd=7.2v idq=200ma pin-po characteristics @f=520mhz 0 5 10 15 20 25 30 35 40 -10 -5 0 5 10 15 20 pin(dbm) po(dbm) , gp(db) , idd(a) 20 30 40 50 60 70 80 90 100 d(%) ta=+25c f=520mhz vdd=7.2v idq=200ma po 3 gp pin-po characteristics @f=520mhz 0.0 1.0 2.0 3.0 4.0 0 20 40 60 80 100 pin(mw) pout(w) , idd(a) 20 40 60 80 100 d(%) po d idd ta=25c f=520mhz vdd=7.2v idq=200ma vdd-po characteristics @f=175mhz 0 1 2 3 4 5 6 7 35791113 vdd(v) po(w) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 idd(a) po idd ta=25c f=175mhz pin=50mw idq=200ma zg=zi=50 ohm vdd-po characteristics @f=520mhz 0 1 2 3 4 5 6 7 35791113 vdd(v) po(w) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 idd(a) po idd ta=25c f=520mhz pin=50mw idq=200ma zg=zi=50 ohm
silicon rf power semiconductors rd02mus1b rohs compliance,silicon mosfet po wer transistor 175mhz,520mhz,2w rd02mus1b 17 aug 2010 5/9 electrostatic sensitive device observe handling precautions test circuit(f=175mhz) test circuit(f=520mhz) 5mm micro strip line width=2.2mm/50ohm,er:2.7,t=0.8mm note:board material-teflon substrate c1,c2:1000 p f,0.0022uf in p arallel c2 l3 12mm 68ohm 19mm rf-out c1 10uf,50v 33mm 12mm 3mm 13.5mm l1: enameled wire 5turns,d:0.43mm,2.46mmo.d 240pf 4.7kohm 15mm vgg vdd 62pf rf-in 62pf 3mm 39pf 43pf 3mm rd02mvs1 11.5mm 10pf 10pf l2: enameled wire 3turns,d:0.43mm,2.46mmo.d l3: enameled wire 9turns,d:0.43mm,2.46mmo.d l1 l2 175mhz 6.5mm 5mm 5mm rd02mus1b micro strip line width=2.2mm/50ohm,er:2.7,t=0.8m m note:board material-teflon substrate c1,c2:1000pf,0.022uf in parallel c2 l1 40.5mm 68ohm 19mm rf-out c1 10uf,50v 20mm 2mm 10mm 11mm 4.5mm l1: enameled wire 9turns,d:0.43mm,2.46mmo.d 240pf 4.7kohm 19mm vgg vdd 62pf rf-in 62pf 26.5mm 43pf 6pf 18pf 3mm rd02mus1 520mhz b
silicon rf power semiconductors rd02mus1b rohs compliance,silicon mosfet po wer transistor 175mhz,520mhz,2w rd02mus1b 17 aug 2010 6/9 electrostatic sensitive device observe handling precautions input/output impedance vs. frequency characteristics 175mhz zin* 175mhz zout* 175mhz zin* zout* zo=50 ? vdd=7.2v, idq=200ma(vgg adj.),pin=0.05w zin*=11.61+j17.88 zout*=6.83+j5.21 zin*: complex conjugate of input impedance zout*: complex conjugate of input impedance 520mhz zin* zout* zo=50 ? vdd=7.2v, idq=200ma(vgg adj.),pin=0.05w zin*=1.20+j5.47 zout*=5.56+j1.31 zin*: complex conjugate of input impedance zout*: complex conjugate of input impedance 520mhz zin* 520mhz zout* output impedance output impedance
silicon rf power semiconductors rd02mus1b rohs compliance,silicon mosfet po wer transistor 175mhz,520mhz,2w rd02mus1b 17 aug 2010 7/9 electrostatic sensitive device observe handling precautions rd02mus1b s-parameter data (@vdd=7.2v, id=200ma) freq. [mhz] (mag) (ang) (mag) (ang) (mag) (ang) (mag) (ang) 100 0.847 -132.5 16.923 100.2 0.042 8.9 0.621 -118.8 135 0.828 -144.6 12.806 90.7 0.042 -0.1 0.598 -130.5 150 0.824 -148.1 11.555 87.5 0.042 -3.3 0.591 -133.7 175 0.817 -152.8 9.864 82.8 0.042 -7.6 0.590 -138.0 200 0.816 -156.2 8.579 78.6 0.041 -11.2 0.594 -141.2 250 0.816 -161.2 6.712 71.2 0.039 -17.6 0.609 -145.5 300 0.820 -164.9 5.436 64.9 0.038 -23.0 0.628 -148.8 350 0.827 -167.6 4.501 59.3 0.036 -28.2 0.653 -151.2 400 0.835 -169.9 3.813 54.0 0.034 -32.2 0.675 -153.5 450 0.844 -171.9 3.257 49.3 0.032 -36.5 0.699 -155.8 500 0.854 -173.6 2.823 44.9 0.031 -39.8 0.723 -157.7 520 0.858 -174.3 2.668 43.1 0.030 -41.1 0.732 -158.4 527 0.859 -174.7 2.613 42.6 0.030 -41.9 0.735 -158.6 550 0.862 -175.3 2.458 40.9 0.029 -43.2 0.743 -159.6 600 0.871 -176.7 2.161 37.1 0.027 -46.6 0.763 -161.5 650 0.878 -178.0 1.911 33.5 0.025 -49.5 0.781 -162.9 700 0.883 -179.4 1.701 30.4 0.024 -51.5 0.798 -164.6 750 0.890 179.4 1.522 27.3 0.022 -54.4 0.811 -166.1 800 0.897 178.3 1.368 24.4 0.021 -56.1 0.824 -167.7 850 0.899 177.0 1.238 21.7 0.019 -58.7 0.836 -169.0 900 0.905 176.0 1.123 19.3 0.018 -59.4 0.845 -170.3 950 0.907 175.1 1.025 17.1 0.016 -60.7 0.853 -171.4 1000 0.913 174.3 0.937 14.9 0.015 -62.1 0.861 -172.5 1050 0.915 173.2 0.859 12.9 0.013 -64.4 0.870 -173.5 1100 0.918 172.6 0.794 11.0 0.012 -64.9 0.874 -174.6 s11 s21 s12 s22
silicon rf power semiconductors rd02mus1b rohs compliance,silicon mosfet po wer transistor 175mhz,520mhz,2w rd02mus1b 17 aug 2010 8/9 electrostatic sensitive device observe handling precautions attention: 1.high temperature ; this product might have a heat generation while operation,please take notice tha t have a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch off. at the near the product,do not place the combustible material that have possibilities to aris e the fire. 2.generation of high frequency power ; this product generate a high frequency power. please take notic e that do not leakage the unnecessary electric wave and use this products without cause damage for human and property per normal operation. 3.before use; before use the product,please design the equipment in consideration of the risk for human and electric wave obstacle for equipment. precautions for the use of mitsubishi silicon rf power devices: 1. the specifications of mention are not guarantee values in this data sheet. please confirm additional details regarding operation of these products from the formal specification sheet. for copies of the formal specification sheets, please contact one of our sales offices. 2. rd series products (rf power transistors) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. in particular, while these products ar e highly reliable for their designed purpose, they are not manufactured under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed necessary for critical communications elements. examples of critical co mmunications elements would include transmitters fo r base station applications and fixed station applications that operate with long term continuous transmission and a higher on-off frequency during transmitting, especially for systems that may have a high impact t o society. 3. rd series products use mosfet semiconductor technology. they are sensitive to esd voltage therefor e appropriate esd precautions are required. 4. in the case of use in below than recommended frequency, there is possibility to occur that the device is deteriorated or destroyed due to the rf-swing exceed the breakdown voltage. 5. in order to maximize reliability of the equipment, it is better to keep the devices temperature low. it is recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan, etc.) to keep the channel temperature for rd series products lower than 120deg/c(in case o f tchmax=150deg/c) ,140deg/c(in case of tchmax=175deg/c) under standard conditions. 6. do not use the device at the exceeded the maximu m rating condition. in case of plastic molded devices, the exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to extreme short current flow between the drain and the source of the device. these results causes in fire or injury. 7. for specific precautions regarding assembly of these products into the equipment, please refer to th e supplementary items in the specification sheet. 8. warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in any way from it?s original form. 9. for additional ?safety first? in your circuit design and notes regarding the materials, please refer the las t page of this data sheet. 10. please refer to the additional precautions in the formal specification sheet.
silicon rf power semiconductors rd02mus1b rohs compliance,silicon mosfet po wer transistor 175mhz,520mhz,2w rd02mus1b 17 aug 2010 9/9 electrostatic sensitive device observe handling precautions mitsubishi electric corporation puts the maximum effort in to making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with t hem. trouble with semiconductors ma y lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circ uits, (ii) use of non-flammable material or (iii) prevention agai nst any malfunction or mishap. keep safety first in your circuit designs ! - these materials are intended as a reference to assist our cu stomers in the selection of the mitsubishi semiconductor product best suited to the customer?s application; they do not convey any license under any intellectual property rights, or any other rights, belonging to mitsubishi electr ic corporation or a third party. - mitsubishi electric corporation assumes no responsibility for any damage, or infringem ent of any third-party?s rights, origin ating in the use of any product data, diagrams, charts, programs, al gorithms, or circuit applicati on examples contained in these materials. - all information contained in these mate rials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are s ubject to change by mitsubishi electric corporation without notice due to product improvements or other reasons. it is therefore recommended that customers contact mitsubishi electric corporation or an aut horized mitsubishi semiconducto r product distributor for the latest product informatio n before purchasing a product listed herein. t he information described here may contain technical inaccuracies or typographical errors. mitsubishi electric co rporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay a ttention to information published by mitsubish i electric corporation by various means, including the mitsubishi semiconductor hom e page (http:// www.mits ubishichips.com). - when using any or all of the informati on contained in these materials, including pr oduct data, diagrams, charts, programs, an d algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. mitsubishi electr ic corporation assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. - mitsubishi electric corporati on semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. please contact mitsubishi electr ic corporation or an authorize d mitsubishi semiconductor product distributor when considering the use of a product contained herei n for any specific purposes, such as apparatus or systems fo r transportation, vehicular, medical, aer ospace, nuclear, or undersea repeater use. - the prior written approval of mitsubishi el ectric corporation is necessary to reprin t or reproduce in whole or in part these materials. - if these products or technologi es are subject to the japanese export control restrictions, they must be exported under a lice nse from the japanese government and cannot be imported in to a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. - please contact mitsubishi elec tric corporation or an authorized mitsubishi se miconductor product distri butor for further deta ils on these materials or the products contained therein. notes regarding these materials
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